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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2711GR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain DESCRIPTION The PA2711GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES * Low on-state resistance RDS(on)1 = 9 m MAX. (VGS = -10 V, ID = -6.5 A) RDS(on)2 = 15 m MAX. (VGS = -4.5 V, ID = -6.5 A) RDS(on)3 = 20 m MAX. (VGS = -4.0 V, ID = -6.5 A) * Low Ciss: Ciss = 2450 pF TYP. * Small and surface mount package (Power SOP8) 6.0 0.3 4.4 +0.10 -0.05 1 4 5.37 MAX. 1.44 0.8 1.8 MAX. 0.15 0.05 MIN. 0.5 0.2 0.10 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M PA2711GR ABSOLUTE MAXIMUM RATINGS (TA = 25C, Unless otherwise noted, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note3 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg -30 m20 m13 m52 2 2 150 -55 to + 150 -13 16.9 V V A A W W C C A mJ Source Gate Body Diode EQUIVALENT CIRCUIT Drain Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Notes 1. 2. 3. 4. Remark Note4 Note4 IAS EAS PW 10 s, Duty Cycle 1% 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec Starting Tch = 25C, VDD = -15 V, RG = 25 , L = 100 H, VGS = -20 0 V Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G15979EJ1V0DS00 (1st edition) Date Published March 2004 NS CP(K) Printed in Japan 2004 PA2711GR ELECTRICAL CHARACTERISTICS (TA = 25C, Unless otherwise noted, All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 TEST CONDITIONS VDS = -30 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -6.5 A VGS = -10 V, ID = -6.5 A VGS = -4.5 V, ID = -6.5 A VGS = -4.0 V, ID = -6.5 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -15 V, ID = -6.5 A VGS = -10 V RG = 10 MIN. TYP. MAX. UNIT -1 m100 -1.0 10 22 7.4 10 12 2450 740 410 10 15 230 130 9 15 20 A A V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC -2.5 Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = -24 V VGS = -10 V ID = -13 A IF = 13 A, VGS = 0 V IF = 13 A, VGS = 0 V di/dt = 50 A/s 57 6.3 19 0.81 62 31 Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = -20 0 V - ID VDD 50 L VDD PG. BVDSS VDS VGS(-) 0 Starting Tch = 1 s Duty Cycle 1% VDS Wave Form TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL RG VDD VDS(-) 90% 10% 10% 90% VGS(-) VGS Wave Form 0 10% VGS 90% IAS VDS 0 td(on) ton tr td(off) toff tf TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = -2 mA PG. 50 RL VDD 2 Data Sheet G15979EJ1V0DS PA2711GR ELECTRICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 2.8 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W Mounted on ceramic substrate of 1200 mm2 x 2.2 mm 100 80 60 40 20 0 0 25 50 75 100 125 150 175 2.4 2 1.6 1.2 0.8 0.4 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - C -100 RDS(on) Limited (at VGS = -10 V) ID(DC) ID(pulse) PW = 100 s ID - Drain Current - A -10 1 ms DC -1 Power Dissipation Limited 100 ms 10 ms -0.1 Single pulse, TA = 25C Mounted on ceramic substrate of 1200 mm2 x 2.2 mm, 1unit -0.01 -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 62.5C/W 10 1 0.1 Single pulse, TA = 25C Mounted on ceramic substrate of 1200 mm2 x 2.2 mm 0.01 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15979EJ1V0DS 3 PA2711GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -60 -4.5 V -50 VGS = -10 V -4.0 V FORWARD TRANSFER CHARACTERISTICS -1000 -100 -10 -1 -0.1 Pulsed -0.01 Tch = -55C 25C 75C 150C ID - Drain Current - A -40 -30 -20 -10 0 0 -0.4 ID - Drain Current - A Pulsed VDS = -10 V 0 -1 -2 -3 -4 -5 -0.8 -1.2 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S -3 VGS(off) - Gate Cut-off Voltage - V 100 Tch = -55C 25C 75C 150C -2.5 -2 -1.5 -1 -0.5 0 -50 0 50 100 150 Tch - Channel Temperature - C - 10 1 Pulsed VDS = -10 V 0.1 -0.1 -1 -10 -100 Pulsed VDS = -10 V ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 25 20 15 10 5 0 -0.1 VGS = -4.0 V -4.5 V -10 V RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed ID = -6.5 A 30 20 10 0 0 -5 -10 -15 -20 VGS - Gate to Source Voltage - V -1 -10 -100 ID - Drain Current - A 4 Data Sheet G15979EJ1V0DS PA2711GR DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 30 Ciss, Coss, Crss - Capacitance - pF 10000 Ciss 1000 Coss 25 20 15 10 5 0 -50 Pulsed ID = -6.5 A 0 50 100 150 V GS = -4.0 V -4.5 V -10 V Crss 100 VGS = 0 V f = 1 MHz 10 -0.01 -0.1 -1 -10 -100 Tch - Channel Temperature - C SWITCHING CHARACTERISTICS VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 -30 VDS - Drain to Source Voltage - V td(off) -15 VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns ID = -13 A VDD = -24 V -15 V -6 V 100 tf tr -20 -10 10 td(on) VDD = -15 V VGS = -10 V RG = 10 -10 -100 -10 VGS VDS 0 0 10 20 30 40 50 60 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT -5 1 -0.1 0 -1 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 100 10 1 0.1 Pulsed 0.01 0 0.2 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V 1000 VGS = -10 V 0V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 100 10 di/dt = 50 A/s VGS = 0 V 1 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet G15979EJ1V0DS 5 PA2711GR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 VDD = -15 V RG = 25 VGS = -20 0 V IAS -13 A -100 IAS - Single Avalanche Current - A Energy Derating Factor - % IAS = -13 A -10 EAS = 16.9 mJ 100 80 60 40 20 0 -1 VDD = -15 V VGS = -20 0 V RG = 25 Starting Tch = 25C 100 m 1 10 -0.1 10 m 25 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - C 6 Data Sheet G15979EJ1V0DS PA2711GR * The information in this document is current as of March, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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